Controlled Pulse - Etching with Xenon Di uoride
نویسندگان
چکیده
A gas-phase, room-temperature, plasmaless isotropic etching system has been used for bulk and thin lm silicon etching. A computer controlled multi-chambered etcher is used to provide precisely metered pulses of xenon di uoride (XeF2) gas to the etch chamber. Etch rates as high as 15 microns per minute have been observed. The etch appears to have in nite selectivity to many common thin lms, including silicon dioxide, silicon nitride, photoresist, and aluminum. The etch rate, pro le, and roughness are reported as a function of mask aperture, etch pressure, and duration.
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